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Parts no
Product status
New (0)
Active (7)
NRFND (0)
Series/Type
High elasticity Low CTE Ultra-thin IC substrate materials (1)
High modulus Low CTE IC substrate materials (2)
Low CTE IC substrate materials Designed to Improve Reliability (2)
Ultra-low transmission loss Circuit board materials for IC substrate/Module (2)
Reset
Glass transition temp.(Tg) :DSC
- (7)
Reset
Glass transition temp.(Tg) :TMA (°C)
-
190 (2)
210 (2)
- (3)
Reset
Glass transition temp.(Tg) :TMA
Measurement in tensile mode (°C)
240 (1)
- (6)
Reset
Glass transition temp.(Tg) :DMA (°C)
260 (2)
- (5)
Reset
Glass transition temp.(Tg) :DMA
Measurement in tensile mode (°C)
-
230 (2)
260 (2)
270 (1)
- (2)
Reset
Thermal decomposition temp.(Td):TGA (°C)
-
365 (2)
390 (1)
420 (2)
- (2)
Reset
Volume resistivity:IPC-TM-650 2.5.17.1,C-96/35/90 (MΩ·cm)
1 x 10⁸ (2)
1 x 10⁹ (1)
- (4)
Reset
Dielectric constant(Dk)@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50
-
3.6 (1)
4.1 (1)
4.4 (2)
4.6 (2)
4.7 (1)
Reset
Dielectric constant(Dk)@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50
- (7)
Reset
Dielectric constant(Dk)@12GHz:Balanced-type circular disk resonator,C-24/23/50
-
3.5 (1)
4 (1)
- (5)
Reset
Dissipation factor(Df )@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50
-
0.002 (2)
0.011 (1)
0.015 (3)
0.016 (1)
Reset
Dissipation factor(Df )@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50
- (7)
Reset
Dissipation factor(Df )@12GHz:Balanced-type circular disk resonator,C-24/23/50
-
0.003 (1)
0.004 (1)
- (5)
Reset
Time to delam(T288)Without Cu:IPC-TM-650 2.4.24.1 (min)
>120 (1)
- (6)
Reset
Time to delam(T288)With Cu:IPC-TM-650 2.4.24.1 (min)
>120 (1)
- (6)
Reset
CTE:α1,X-axis,IPC-TM-650 2.4.24 (ppm/°C)
10 *1 (2)
3-5 *1 (1)
4-6 (1)
7 *1 (1)
7-8 (1)
8-10 *1 (1)
Reset
CTE:α1,Y-axis,IPC-TM-650 2.4.24 (ppm/°C)
10 *1 (2)
3-5 *1 (1)
4-6 (1)
7 *1 (1)
7-8 (1)
8-10 *1 (1)
Reset
CTE:α1,Z-axis,IPC-TM-650 2.4.24 (ppm/°C)
20 (2)
22 (3)
- (2)
Reset
CTE:α2,Z-axis,IPC-TM-650 2.4.24 (ppm/°C)
100 (2)
120 (2)
95 (1)
- (2)
Reset
Thermal conductivity:Laser flash,25˚C (W/m·K)
0.52 (2)
0.55 (2)
0.7 (1)
- (2)
Reset
Surface resistivity:IPC-TM-650 2.5.17.1,C-96/35/90 (MΩ)
1 x 10⁸ (3)
- (4)
Reset
Water absorption:IPC-TM-650 2.6.2.1,D-24/23 (%)
0.06 (2)
0.15-0.20 (2)
0.3 (1)
- (2)
Reset
Flexural modulus,Warp/MD:JIS C 6481 (GPa)
29 (1)
33 (1)
35 (1)
- (4)
Reset
Flexural modulus,Fill/TD:JIS C 6481 (GPa)
28 (1)
32 (1)
33 (1)
- (4)
Reset
Peel strength,1oz:IPC-TM-650 2.4.8 (kN/m (lb/inch))
0.5-0.6(2.9-3.4)
(12μm) (2)
0.6(3.4)
(12μm) (4)
0.9(5.1)
(12μm) (1)
Reset
Flammability:UL,C-48/23/50
94V-0 (3)
- (4)
Reset
The sample thickness
The sample thickness is depending on the test method. (7)
Reset
The above data are typical values and not guaranteed values.
- (7)
Reset
*1 Test method: TMA
- (7)
Reset
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Series/Type
Glass transition temp.(Tg) :DSC
Glass transition temp.(Tg) :TMA
Glass transition temp.(Tg) :TMA Measurement in tensile mode
Glass transition temp.(Tg) :DMA
Glass transition temp.(Tg) :DMA Measurement in tensile mode
Thermal decomposition temp.(Td):TGA
Volume resistivity:IPC-TM-650 2.5.17.1,C-96/35/90
Dielectric constant(Dk)@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50
Dielectric constant(Dk)@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50
Dielectric constant(Dk)@12GHz:Balanced-type circular disk resonator,C-24/23/50
Dissipation factor(Df )@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50
Dissipation factor(Df )@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50
Dissipation factor(Df )@12GHz:Balanced-type circular disk resonator,C-24/23/50
Select display items by click or drag-and-drop
Time to delam(T288)Without Cu:IPC-TM-650 2.4.24.1
Time to delam(T288)With Cu:IPC-TM-650 2.4.24.1
CTE:α1,X-axis,IPC-TM-650 2.4.24
CTE:α1,Y-axis,IPC-TM-650 2.4.24
CTE:α1,Z-axis,IPC-TM-650 2.4.24
CTE:α2,Z-axis,IPC-TM-650 2.4.24
Thermal conductivity:Laser flash,25˚C
Surface resistivity:IPC-TM-650 2.5.17.1,C-96/35/90
Water absorption:IPC-TM-650 2.6.2.1,D-24/23
Flexural modulus,Warp/MD:JIS C 6481
Flexural modulus,Fill/TD:JIS C 6481
Peel strength,1oz:IPC-TM-650 2.4.8
Flammability:UL,C-48/23/50
The sample thickness
The above data are typical values and not guaranteed values.
*1 Test method: TMA
Choice
Parts no
Catalog /
Datasheet
Series/Type
Glass transition temp.(Tg) :DSC
Glass transition temp.(Tg) :TMA
(°C)
Glass transition temp.(Tg) :TMA
Measurement in tensile mode
(°C)
Glass transition temp.(Tg) :DMA
(°C)
Glass transition temp.(Tg) :DMA
Measurement in tensile mode
(°C)
Thermal decomposition temp.(Td):TGA
(°C)
Volume resistivity:IPC-TM-650 2.5.17.1,C-96/35/90
(MΩ·cm)
Dielectric constant(Dk)@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50
Dielectric constant(Dk)@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50
Dielectric constant(Dk)@12GHz:Balanced-type circular disk resonator,C-24/23/50
Dissipation factor(Df )@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50
Dissipation factor(Df )@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50
Dissipation factor(Df )@12GHz:Balanced-type circular disk resonator,C-24/23/50
Time to delam(T288)Without Cu:IPC-TM-650 2.4.24.1
(min)
Time to delam(T288)With Cu:IPC-TM-650 2.4.24.1
(min)
CTE:α1,X-axis,IPC-TM-650 2.4.24
(ppm/°C)
CTE:α1,Y-axis,IPC-TM-650 2.4.24
(ppm/°C)
CTE:α1,Z-axis,IPC-TM-650 2.4.24
(ppm/°C)
CTE:α2,Z-axis,IPC-TM-650 2.4.24
(ppm/°C)
Thermal conductivity:Laser flash,25˚C
(W/m·K)
Surface resistivity:IPC-TM-650 2.5.17.1,C-96/35/90
(MΩ)
Water absorption:IPC-TM-650 2.6.2.1,D-24/23
(%)
Flexural modulus,Warp/MD:JIS C 6481
(GPa)
Flexural modulus,Fill/TD:JIS C 6481
(GPa)
Peel strength,1oz:IPC-TM-650 2.4.8
(kN/m (lb/inch))
Flammability:UL,C-48/23/50
The sample thickness
The above data are typical values and not guaranteed values.
*1 Test method: TMA
R-1515E/R-1410E
High elasticity Low CTE Ultra-thin IC substrate materials
-
-
240
-
270
390
1 x 10⁹
4.7
-
-
0.011
-
-
>120
>120
8-10 *1
8-10 *1
22
95
0.7
1 x 10⁸
0.3
35
33
0.9(5.1)
(12μm)
94V-0
The sample thickness is depending on the test method.
-
-
R-1515K
Low CTE IC substrate materials Designed to Improve Reliability
-
-
-
-
260
-
-
4.6
-
-
0.015
-
-
-
-
7 *1
7 *1
-
-
-
-
-
-
-
0.6(3.4)
(12μm)
-
The sample thickness is depending on the test method.
-
-
R-1515V
Low CTE IC substrate materials Designed to Improve Reliability
-
-
-
-
260
-
-
4.4
-
-
0.016
-
-
-
-
3-5 *1
3-5 *1
-
-
-
-
-
-
-
0.6(3.4)
(12μm)
-
The sample thickness is depending on the test method.
-
-
R-G535E
High modulus Low CTE IC substrate materials
-
210
-
260
-
365
1 x 10⁸
4.6
-
-
0.015
-
-
-
-
7-8
7-8
20
100
0.55
1 x 10⁸
0.15-0.20
29
28
0.6(3.4)
(12μm)
-
The sample thickness is depending on the test method.
-
-
R-G535S
High modulus Low CTE IC substrate materials
-
210
-
260
-
365
1 x 10⁸
4.4
-
-
0.015
-
-
-
-
4-6
4-6
20
100
0.55
1 x 10⁸
0.15-0.20
33
32
0.6(3.4)
(12μm)
-
The sample thickness is depending on the test method.
-
-
R-G545E/R-G540E
Ultra-low transmission loss Circuit board materials for IC substrate/Module
-
190
-
-
230
420
-
4.1
-
4
0.002
-
0.004
-
-
10 *1
10 *1
22
120
0.52
-
0.06
-
-
0.5-0.6(2.9-3.4)
(12μm)
94V-0
The sample thickness is depending on the test method.
-
-
R-G545L/R-G540L
Ultra-low transmission loss Circuit board materials for IC substrate/Module
-
190
-
-
230
420
-
3.6
-
3.5
0.002
-
0.003
-
-
10 *1
10 *1
22
120
0.52
-
0.06
-
-
0.5-0.6(2.9-3.4)
(12μm)
94V-0
The sample thickness is depending on the test method.
-
-