Features (APX300 option S)

Various process options available inherited from previous best seller model E620

Power devices (Si, SiC, GaN)

Si trench / SiC trench / AlGaN recess / Poly-Si gate

SAW • Communication devices

LN substrate (LiNbOx) / Low-k contact / GaAs via / SiC via

MEMS • Sensors

TSV / Si deep etching / SiO2 / PZT layer (future)

 

Process Chamber and Two Types of Plasma Sources

Process chamber with MSC-ICP

Process chamber with MSC-ICP

Plasma source and electron density

Plasma source and electron density

 

Two Types of Handling System

Atmospheric loading supply / Vacuum load lock supply

 

APX300 (Option S)