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半导体封装基板材料「LEXCM GX」系列 : 型号

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数据表		 系列/类型 Glass transition temp.(Tg) :DSC Glass transition temp.(Tg) :TMA
(°C) 		Glass transition temp.(Tg) :TMA
Measurement in tensile mode
(°C) 		Glass transition temp.(Tg) :DMA
(°C) 		Glass transition temp.(Tg) :DMA
Measurement in tensile mode
(°C) 		Thermal decomposition temp.(Td):TGA
(°C) 		Volume resistivity:IPC-TM-650 2.5.17.1,C-96/35/90
(MΩ·cm)		 Dielectric constant(Dk)@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50 Dielectric constant(Dk)@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50 Dielectric constant(Dk)@12GHz:Balanced-type circular disk resonator,C-24/23/50 Dissipation factor(Df )@1GHz:IPC-TM-650 2.5.5.9,C-24/23/50 Dissipation factor(Df )@10GHz:IPC-TM-650 2.5.5.5,C-24/23/50 Dissipation factor(Df )@12GHz:Balanced-type circular disk resonator,C-24/23/50 Time to delam(T288)Without Cu:IPC-TM-650 2.4.24.1
(min)		 Time to delam(T288)With Cu:IPC-TM-650 2.4.24.1
(min)		 CTE:α1,X-axis,IPC-TM-650 2.4.24
(ppm/°C)		 CTE:α1,Y-axis,IPC-TM-650 2.4.24
(ppm/°C)		 CTE:α1,Z-axis,IPC-TM-650 2.4.24
(ppm/°C)		 CTE:α2,Z-axis,IPC-TM-650 2.4.24
(ppm/°C)		 Thermal conductivity:Laser flash,25˚C
(W/m·K)		 Surface resistivity:IPC-TM-650 2.5.17.1,C-96/35/90
(MΩ)		 Water absorption:IPC-TM-650 2.6.2.1,D-24/23
(%)		 Flexural modulus,Warp/MD:JIS C 6481
(GPa)		 Flexural modulus,Fill/TD:JIS C 6481
(GPa)		 Peel strength,1oz:IPC-TM-650 2.4.8
(kN/m (lb/inch))		 Flammability:UL,C-48/23/50 The sample thickness The above data are typical values and not guaranteed values. *1 Test method: TMA
R-1515E/R-1410E
 High elasticity Low CTE Ultra-thin IC substrate materials - - 240 - 270 390 1 x 10⁹ 4.7 - - 0.011 - - >120 >120 8-10 *1 8-10 *1 22 95 0.7 1 x 10⁸ 0.3 35 33 0.9(5.1)
(12μm)		 94V-0 The sample thickness is depending on the test method. - -
R-1515K
 Low CTE IC substrate materials Designed to Improve Reliability - - - - 260 - - 4.6 - - 0.015 - - - - 7 *1 7 *1 - - - - - - - 0.6(3.4)
(12μm)		 - The sample thickness is depending on the test method. - -
R-1515V
 Low CTE IC substrate materials Designed to Improve Reliability - - - - 260 - - 4.4 - - 0.016 - - - - 3-5 *1 3-5 *1 - - - - - - - 0.6(3.4)
(12μm)		 - The sample thickness is depending on the test method. - -
R-G535E
 High modulus Low CTE IC substrate materials - 210 - 260 - 365 1 x 10⁸ 4.6 - - 0.015 - - - - 7-8 7-8 20 100 0.55 1 x 10⁸ 0.15-0.20 29 28 0.6(3.4)
(12μm)		 - The sample thickness is depending on the test method. - -
R-G535S
 High modulus Low CTE IC substrate materials - 210 - 260 - 365 1 x 10⁸ 4.4 - - 0.015 - - - - 4-6 4-6 20 100 0.55 1 x 10⁸ 0.15-0.20 33 32 0.6(3.4)
(12μm)		 - The sample thickness is depending on the test method. - -
R-G545E/R-G540E
 Ultra-low transmission loss Circuit board materials for IC substrate/Module - 190 - - 230 420 - 4.1 - 4 0.002 - 0.004 - - 10 *1 10 *1 22 120 0.52 - 0.06 - - 0.5-0.6(2.9-3.4)
(12μm)		 94V-0 The sample thickness is depending on the test method. - -
R-G545L/R-G540L
 Ultra-low transmission loss Circuit board materials for IC substrate/Module - 190 - - 230 420 - 3.6 - 3.5 0.002 - 0.003 - - 10 *1 10 *1 22 120 0.52 - 0.06 - - 0.5-0.6(2.9-3.4)
(12μm)		 94V-0 The sample thickness is depending on the test method. - -
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