News : New product

New product

May 25,2020

FCAB22710L is designed for 5G smartphones: It is a Dual Nch MOSFET with great features:
Low impedance, anti-self turn-on at SW mode,
low build-in gate resistance and
higher threshold voltage(Vth).
▼Key specification

RSS(on)＝7.5mΩ, Rg=24.5Ω, Vth=1.85V
VSS=20V, Size＝2.58×1.29mm
→Download datasheet

New product

Apr. 1, 2020

FC4B22690L designed for duplicated battery protection circuits of earphones: Thanks to the small RSS(on) variation design,
the MOSFET can help to improve the accuracy in
overcurrent detection which is useful for
new safety standard IEC62368-1.
The low leakage performance contributes to solving
deep discharge issues.
▼Key specification

RSS(on)=30mΩ (Max-Min＝21mΩ), IGSS=±0.1µA
VSS=20V, Size=1.1×1.1mm
→Download datasheet

New product

Mar. 1, 2020

FCAB22630L is suitable for Li-battery protection circuits of the small home factor devices: We bring a 23V breakdown voltage dual Nch MOSFET
into our portfolio.
Compare with the conventional part(FCAB22370L),
it has 38% higher IS rating and
27% lower impedance improvement.
▼Key specification

IS=13.8A, RSS(on)=2.4mΩ, Size＝3.40×1.96mm
→Download datasheet

New product

Mar. 1, 2020

FCAB22620L is suitable for Li-battery protection circuits of the small home factor devices: We bring a 23V breakdown voltage dual Nch MOSFET
into our portfolio.
The switching speed of charging FET is faster than
FCAB22630L.
▼Key specification

Turn on time=0.3µsec, Size＝3.40×1.96mm
RSS(on)=2.4mΩ
→ Download datasheet

New product

Mar. 1, 2020

FCAB21830L is suitable for Li-battery protection circuits of the small home factor devices: We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
Compare with the conventional part, it is with
greater SOA rating and 35% miniaturization on
package size.
▼Key specification 　

Size＝1.96×1.84mm, RSS(on)=2.5mΩ
→Download datasheet

New product

Feb. 10, 2020

FCAB21770L is suitable for Li-battery protection circuits of the small home factor devices: We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
Compare with the conventional part FCAB21260L,
it is with 99% leakage reduction and
10% lower RSS(on) rating.
It is suitable for not only the conventional low side
circuit but also the high side circuit.
▼Key specification

IGSS(VGS8V)=±0.12µA, RSS(on)=2mΩ
Size＝3.50×1.77mm
→Download datasheet

New product

Feb. 10, 2020

FCAB21890L is suitable for Li-battery protection circuits of the small home factor devices: We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
It is footprint and package size compatible with
the conventional part FCAB21490L but with
lower RSS(on) rating.
▼Key specification

RSS(on)=1.95mΩ, Size＝2.98×1.49mm
→Download datasheet

New product

Mar. 1, 2020

FCAB22670L is suitable for Li-battery protection circuits for wearable devices: We bring a 20V breakdown voltage dual Nch MOSFET
into our portfolio.
The low leakage performance benefits to solving
deep discharging issues.
▼Key specification

IGSS=±1.0µA, RSS(on)＝37.5mΩ, Size＝1.10×1.10mm
→Download datasheet

New product

Dec. 24, 2019

FCAB21280L is suitable for Li-battery protection circuits of the small home factor devices: We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
The low leakage performance benefits to solving
deep discharging issues.
▼Key specification

IGSS=±1.0µA, RSS(on)＝17mΩ, Size＝1.10×1.10mm
→Download datasheet