News : New product

New product
May 25,2020
FCAB22710L is designed for 5G smartphones
It is a Dual Nch MOSFET with great features:
Low impedance, anti-self turn-on at SW mode,
low build-in gate resistance and
higher threshold voltage(Vth).
▼Key specification
RSS(on)=7.5mΩ, Rg=24.5Ω, Vth=1.85V
VSS=20V, Size=2.58×1.29mm
→Download datasheet
New product
Apr. 1, 2020
FC4B22690L designed for duplicated battery
protection circuits of earphones
Thanks to the small RSS(on) variation design,
the MOSFET can help to improve the accuracy in
overcurrent detection which is useful for
new safety standard IEC62368-1.
The low leakage performance contributes to solving
deep discharge issues.
▼Key specification
RSS(on)=30mΩ (Max-Min=21mΩ), IGSS=±0.1µA
VSS=20V, Size=1.1×1.1mm
→Download datasheet
New product
Mar. 1, 2020
FCAB22630L is suitable for Li-battery protection
circuits of the small home factor devices
We bring a 23V breakdown voltage dual Nch MOSFET
into our portfolio.
Compare with the conventional part(FCAB22370L),
it has 38% higher IS rating and
27% lower impedance improvement.
▼Key specification
IS=13.8A, RSS(on)=2.4mΩ, Size=3.40×1.96mm
→Download datasheet
New product
Mar. 1, 2020
FCAB22620L is suitable for Li-battery protection
circuits of the small home factor devices
We bring a 23V breakdown voltage dual Nch MOSFET
into our portfolio.
The switching speed of charging FET is faster than
FCAB22630L.
▼Key specification
Turn on time=0.3µsec, Size=3.40×1.96mm
RSS(on)=2.4mΩ
→ Download datasheet
New product
Mar. 1, 2020
FCAB21830L is suitable for Li-battery protection
circuits of the small home factor devices
We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
Compare with the conventional part, it is with
greater SOA rating and 35% miniaturization on
package size.
▼Key specification  
Size=1.96×1.84mm, RSS(on)=2.5mΩ
→Download datasheet
New product
Feb. 10, 2020
FCAB21770L is suitable for Li-battery protection
circuits of the small home factor devices
We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
Compare with the conventional part FCAB21260L,
it is with 99% leakage reduction and
10% lower RSS(on) rating.
It is suitable for not only the conventional low side
circuit but also the high side circuit.
▼Key specification
IGSS(VGS8V)=±0.12µA, RSS(on)=2mΩ
Size=3.50×1.77mm
→Download datasheet
New product
Feb. 10, 2020
FCAB21890L is suitable for Li-battery protection
circuits of the small home factor devices
We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
It is footprint and package size compatible with
the conventional part FCAB21490L but with
lower RSS(on) rating.
▼Key specification
RSS(on)=1.95mΩ, Size=2.98×1.49mm
→Download datasheet
New product
Mar. 1, 2020
FCAB22670L is suitable for Li-battery protection
circuits for wearable devices
We bring a 20V breakdown voltage dual Nch MOSFET
into our portfolio.
The low leakage performance benefits to solving
deep discharging issues.
▼Key specification
IGSS=±1.0µA, RSS(on)=37.5mΩ, Size=1.10×1.10mm
→Download datasheet
New product
Dec. 24, 2019
FCAB21280L is suitable for Li-battery protection
circuits of the small home factor devices
We bring a 12V breakdown voltage dual Nch MOSFET
into our portfolio.
The low leakage performance benefits to solving
deep discharging issues.
▼Key specification
IGSS=±1.0µA, RSS(on)=17mΩ, Size=1.10×1.10mm
→Download datasheet