Capable of dicing very thin wafers without damage
Conventional wafer dicing systems using blade dicing technology are disadvantageous in that chipping, cracks or the like are generated when handling very thin wafers or wafers with a low mechanical strength, causing low yields.
APX300, on the other hand, made it possible to dice silicon wafers without causing damage on them by employing plasma etching technology and using no conventional machining process.
Plasma dicing is characterized in that no wafer is chipped, a reduced dicing width of approx. 1/3 of that with blade-dicing technology is achieved and a larger number of chips are produced depending on the size of chips. With plasma dicing technology, it is also possible to simultaneously divide a wafer along the dicing lines provided on the entire wafer surface, and therefore small sized chips can be obtained at high speed.
Usable for various types of supported wafers
APX300 can perform plasma dicing on wafers with protective tape for back grinding, wafers with a dicing frame, wafers with a glass supported substrate, etc.
|Model ID||APX300 Dicer Module (note 2)|
|Plasma source||ICP Plasma|
|Process gas||4 Line (standard) (Maximum 6 lines : Fluoride Gas, Ar, O2, He, etc.)|
|Wafer size *1||φ200 mm (standard), or φ300 mm (with ring frame)|
|Dimensions (mm) *2||W 1 350 × D 2 230 × H 2 000 (Single chamber system (Optional transfer unit attachment type) *3|
|Mass||2 330 kg (differs dipending on machine configuration)|
|Power source *4||3-phase AC 200 / 208 / 220 / 230 / 240 ±10 V、50 / 60 Hz、21.0 kVA|
|Pneumatic source||0.5 MPa 〜 0.7 MPa, 250 L/min (A.N.R.)|
|N2 Source||0.1 MPa 〜 0.2 MPa, 50 L/min (A.N.R.)|