APX300 (Option S) : Dry Etching : Dry Etching

APX300 (Option S)
SEM Photo by Material and Device About Plasma Sources
Features
More Information

Various process options available inherited from previous best seller model E620

Process Chamber and Two Types of Plasma Sources

Two Types of Handling System

Specfication
Model ID APX300
Model No. NM-EFE3AA-S
Plasma source ICP Plasma
Process gas Standard 4 lines (Maximum 6 Lines: Chlorinated Gas, Fluoride Gas, Ar, O2, He, etc.)
Wafer size *1 φ100 mm / 150 mm wafer with orientation flat φ200 mm wafer with notch
Dimensions (mm) [ Load lock wafer Handling ] W 1 350 x D 2 230 x H 2 000 (Exclude touch panel, operation section and signal tower)
[ Load lock wafer Handling ] W 1 375 x D 2 600 x H 2 000 (Exclude touch panel, operation section and signal tower)
Mass 2 000 kg (Differs depending on machine configuration)
Power source *2 3-phase AC 200 / 208 / 220 / 230 / 240 ±10 V、50 / 60 Hz、21.00 kVA
Pneumatic source 0.5 MPa to 0.7 MPa, 250 L/min (A.N.R.)
N2 Source 0.1 MPa to 0.2 MPa, 50 L/min (A.N.R.)
*1 : Please consult , if different size of wafer will be required.
*2 : 3-phase electricity has two kinds of lineage. Figure shows total.
*Details should be referred to Spec.

APX300 (Option S)