In addition to the conventional ICP (Inductive Coupling Plasma source), an advanced ICP has been newly developed. MSC System Advanced ICP
High accuracy: microprocessing and etching at a high aspect ratio are enabled by means of low pressure, high-density plasma.
*Plasma density (to 1012cm-3) *Plasma uniformity (±4.0)
High efficiency:High power efficiency is realized by the use of a low-inductance coil. *Wider matching area provides a large plasma area.
*High efficiency of 1.5 or more times that of the single spiral method system.
Ion saturation current density distribution
Ion saturation current VS the Advanced-ICP power
Low damage: Low damage etching is enabled due to highly uniform non-magnetic plasma.
Easy control: Since the plasma density and ion energy can be controlled independently of each other, process conditions can be set up easily.
Long service life: Wear of the top window caused by sputtering is reduced due to special heating equipment, which is also for Farad-shield.