Compact design
An ICP ashing unit has been combined with proven E620 etching equipment, providing a simple and compact metal etcher. |
Electrostatic chuck electrode (optional)
Dual-polarity static chuck electrodes in the etching chamber improve the processing yield of devices. The reduced number of sliding parts in the chamber minimizes particle generation. |
Built-in high quality ashing chamber
ICP downflow plasma can respond to any resist ashing process after metal etching. The sequence of H 2O-O 2ashing improves anti-corrosion characteristics. |
Saved space
Compact machine size has been achieved by unifying the control unit into the main body. The installation space is 3.6m 2and the main body width is 1 000 mm. |
Highly reliable mechanism
Synchronized transfer mechanism with an all-cam drive is adopted to transfer the wafer. The drive hardly ever malfunctions, even if the operation is irregular or there is a power failure. |
