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The Panasonic booth will showcase a variety of products that are based on the elemental technologies of GaN (gallium nitride)/SiC (silicon carbide) featuring low-loss characteristics that surpass the physical limit of the existing material Si (silicon), from devices to solutions to application examples, as part of its efforts to propose products that contribute to the energy saving and downsizing of electric equipment.
Panasonic booth image at APEC 2019
Key Solutions on Exhibit
|GaN/SiC Power Devices||Overview|
|X-GaN™ power devices, X-GaN™ solutions||By employing a proprietary structure, Panasonic's 600V GaN power device, "X-GaN™" has achieved X-GaN normally-off and current collapse free characteristics, thereby enabling a size reduction and improving the efficiency of power conversion systems. Panasonic will also showcase industrial subsystems that can take full advantage of the X-GaN's high performance, as well as application demos and an evaluation kit for checking the X-GaN performance.|
|SiC-DioMOS devices, SiC modules||Panasonic's proprietary DioMOS (Diode-integrated MOSFET) structure enables a size reduction of SiC modules by adding the free-wheel diode functionality, which is necessary for power supplies and inverters, to transistors. At APEC 2019, Panasonic will introduce SiC-DioMOS-related solutions.|
|GaN bidirectional switches (reference exhibit)||Panasonic provides a new GaN bidirectional switch capable of switching bidirectional and single directional current conduction as well as high voltage isolation with a single element by adopting its innovative device structure. Panasonic will also showcase small DBM (Drive-by-Microwave) isolated gate drivers that can drive this GaN bidirectional switch. Because this GaN bidirectional switch enables the significant reduction of conduction losses and the number of elements for this switching system, it contributes to the downsizing and higher conversion efficiency of power converter circuits.
3-level Inverter Board with GaN Bidirectional Switch
Panasonic's Exhibitor Seminar
■ Date: March 19, 2019, 15:00 - 15:30
■ Place: ANAHEIM CONVENTION CENTER, Session Room 303AB
■ Title: “X-GaN Power Transistor Breakdown Mechanisms”