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    Dry EtchingDry Etching

    E700 Series
    SEM Photo by Material and Device About Plasma Sources

    Features
    Up to Four Loadable Chambers
    High productivity achieved by the multi-chamber system.
    Footprint Within The Industry’s Smallest Class
    Integration of the control unit and gas supply unit into the main equipment makes dual-chamber equipment as compact as a single-chamber equipment.
    High-accuracy High-uniformity Processing
    Advanced ICP and showerhead achieve high-accuracy uniform processing.
    High Flow-rate High-vacuum Discharge System Increases Process Margin
    Use of a large-diameter chamber reduces the effects of the wall surface.
    Reduced Dust Generation
    Use of a slide type gate reduces dust generation.
    Ease of Maintenance
    Easily replaceable quartz plate, inner cover, electrodes etc make maintenance simple and easy.
    Graphic User Interface In English and Japanese
    Improved operability and automatic maintenance check function
    Specfication
    Model ID E720 E760
    Wafer size 6 ~ 8 inch
    Residence time 0.016 s
    Plasma source Advanced ICP
    Etching film WSi, Poly-Si, Si, Silicide, S trench, SiO2, SiN, GaAs etc. TiN, Al-Si-Cu, TiN, Ti, Al, Al-Cu