Main Contents begins from here.
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| Up to Four Loadable Chambers High productivity achieved by the multi-chamber system. |
| Footprint Within The Industry’s Smallest Class Integration of the control unit and gas supply unit into the main equipment makes dual-chamber equipment as compact as a single-chamber equipment. |
| High-accuracy High-uniformity Processing Advanced ICP and showerhead achieve high-accuracy uniform processing. |
| High Flow-rate High-vacuum Discharge System Increases Process Margin Use of a large-diameter chamber reduces the effects of the wall surface. |
| Reduced Dust Generation Use of a slide type gate reduces dust generation. |
| Ease of Maintenance Easily replaceable quartz plate, inner cover, electrodes etc make maintenance simple and easy. |
| Graphic User Interface In English and Japanese Improved operability and automatic maintenance check function |
| Model ID | E720 | E760 |
| Wafer size | 6 ~ 8 inch | |
| Residence time | 0.016 s | |
| Plasma source | Advanced ICP | |
| Etching film | WSi, Poly-Si, Si, Silicide, S trench, SiO2, SiN, GaAs etc. | TiN, Al-Si-Cu, TiN, Ti, Al, Al-Cu |