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| Compact design An ICP ashing unit has been combined with proven E620 etching equipment, providing a simple and compact metal etcher. |
| Electrostatic chuck electrode (optional) Dual-polarity static chuck electrodes in the etching chamber improve the processing yield of devices. The reduced number of sliding parts in the chamber minimizes particle generation. |
| Built-in high quality ashing chamber ICP downflow plasma can respond to any resist ashing process after metal etching. The sequence of H2O-O2 ashing improves anti-corrosion characteristics. |
| Saved space Compact machine size has been achieved by unifying the control unit into the main body. The installation space is 3.6m2 and the main body width is 1 000 mm. |
| Highly reliable mechanism Synchronized transfer mechanism with an all-cam drive is adopted to transfer the wafer. The drive hardly ever malfunctions, even if the operation is irregular or there is a power failure. |
| Model ID | E650 |
| Wafer size | 3 ~ 8 inch |
| Residence time | 0.0414 s |
| Plasma source | Multi-spiral-coil type ICP / RIE |
| Etching film | TiN, Al-Si-Cu, TiN, Ti, Al, Al-Cu |
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