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| Supports super-fine processing with unique IPC plasma source. |
| High reliability inherited from the E600 series proven in mass production |
| Model ID | E620 ICP Dry Etching Equipment R&D Type |
| Wafer size | f3 - 8 inch (f3-inch and square substrates are optional. ) |
| Plasma source | Multi-spiral-coil type ICP / RIE |
| Etching film | Al, Ti, TiN, Si, Poly-Si, W, WSi, SiN, SiO2, SiON, GaAs, InP, GaN, Pt, Au, SBT, PZT, STO, Ni, NiFe, NiCo, Ag, etc. |
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